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Datasheet

BFG198
(Product Specification)
12-Sep-95, 12 pages, 78 kB

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General description

NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.

Features

  • High power gain
  • High output voltage
  • High maximum junction temperature
  • Gold metallization ensures excellent reliability.

Products/packages

Type numberNorth American Type numberOrdering code (12NC)Product statusPackagePackingMarkingChemical contentLeadfree conversion date
BFG198BFG198 T/R9339 199 30115Volume productionSOT223
(SC-73)
Tape reel smdStandard MarkingBFG198
week 34, 2003

Pricing/ordering/availability

Type numberOrdering code(12NC)Indicative price/unit($)RegionDistributorIn stockInventory dateBuy onlineSamples
BFG1989339 199  30115  0.5100      Order samples

Applications

It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc.


Related applications
Transceiver board

Technical documents

Support Models

Parametrics/similar products

Type numberPackageVCE(V)IC(mA)POLARITYPTOT(mW)fT(GHz)GUM(dB)@f(MHz)VO ²(mV)@IC(mA)GUM @f1(dB)GUM @f2(dB)@f1@f2VoVCEO max(V)
BFG198SOT223
(SC-73)
8100NPN100081850070070181550080070010

Similar products

BFG198 links to the similar products page containing an overview of products that are similar in function or related to the type number(s) as listed on this page. The similar products page includes products from the same catalog tree(s), relevant selection guides and products from the same functional category.

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